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| RBV1000D - RBV1010D PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation SILICON BRIDGE RECTIFIERS RBV25 3.9 0.2 C3 30 0.3 4.9 0.2 3.2 0.1 20 0.3 + 13.5 0.3 ~~ 11 0.2 1.0 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 10 7.5 7.5 2.0 0.2 0.7 0.1 0.2 0.2 0.2 Dimensions in millimeters Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 10 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 C Ta = 100 C SYMBOL VRRM VRMS VDC RBV RBV RBV RBV RBV RBV RBV 1000D 1001D 1002D 1004D 1006D 1008D 1010D 50 100 200 400 600 800 1000 35 50 70 100 140 200 280 400 10 420 600 560 800 700 1000 17.5 0.5 UNIT Volts Volts Volts Amps. Amps. A2S Volts A A C/W C C IF(AV) IFSM It VF IR IR(H) RJC TJ TSTG 2 300 166 1.0 10 200 2.2 - 40 to + 150 - 40 to + 150 Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate. UPDATE : NOVEMBER 1,1998 RATING AND CHARACTERISTIC CURVES ( RBV1000D - RBV1010D ) AVERAGE FORWARD OUTPUT CURRENT AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 12 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 10 250 8 200 TJ = 50 C 6 150 4 HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm) Al.-FINNED PLATE 100 2 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES TJ = 100 C 10 Pulse Width = 300 s 1 % Duty Cycle 1.0 1.0 0.1 TJ = 25 C TJ = 25 C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS |
Price & Availability of RBV1010D
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